Characterization of the electric transport properties of black phosphorous back-gated field-effect transistors

Abstract We use thin layers of exfoliated black phosphorus to realize back-gated field-effect transistors in which the Si/SiO 2 substrate is exploited as gate electrode. To prevent detrimental effect air exposure devices are protected by Poly(methyl methacrylate). report observation an improved contact resistance at interface between layered material and metal electrical conditioning. also demonstrate existence a hysteresis transfer characteristics that improves increasing voltage sweep range. Finally, we prove suitability such memory devices.